7 December 1994 Optimizing proximity correction for wafer fabrication processes
Author Affiliations +
Abstract
A key requirement for any proximity correction method is the ability to accurately predict proximity effects for any given circuit configuration. In this paper we present a methodology for characterizing proximity effects from measurements taken on a processed wafer. The characterization will determine what types of effects are present, which effects can be corrected, and it will quantify behavior parameters for a generalized proximity error model.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John P. Stirniman, John P. Stirniman, Michael L. Rieger, Michael L. Rieger, } "Optimizing proximity correction for wafer fabrication processes", Proc. SPIE 2322, 14th Annual BACUS Symposium on Photomask Technology and Management, (7 December 1994); doi: 10.1117/12.195819; https://doi.org/10.1117/12.195819
PROCEEDINGS
8 PAGES


SHARE
RELATED CONTENT


Back to Top