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7 December 1994 SCALPEL masks
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Abstract
The concept of a mask for a projection electron-beam lithography, based on the difference in scattering between two electron transparent materials -- SCALPELTM, has been demonstrated previously. In order to translate this initial proof-of-concept int a mask suitable for a real lithography system, it is necessary to address a large number of issues. Because of the thin membranes employed, the design of the mask, its fabrication, robustness and dimensional stability are critical issues. Cleaning and repair strategies are also affected by the mask structure. Patterning, inspection and metrology are also vital to the production of a viable mask, but these are areas of importance common to all advanced lithographies.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
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