7 December 1994 Toppan's work on phase-shift mask for 64MDRAM
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Alternative type phase shift masks have a great effect on the improvement of resolution and DOF. Through the practical use of them, it is also possible for the i-line to have a 0.3 micrometers design lithography. However, it is yet to be used on a practical level due to the lack of the capability to repair shifter defects, and the difficulty in meeting certain required wafer characteristics. Embedded type phase shift masks are supposed to be able to reach a production use level more easily. This is because the embedded type does not require a transparent shifter layer and defects may therefore by repaired more easily. Toppan defines alternative type phase shift masks as essential technology for 0.3 micrometers lithography, and the embedded type as a technology necessary for use in the early production of 0.4 micrometers - 0.35 micrometers design rule and asic. We would like to introduce our updated improvements of alternative phase shift mask performance, and embedded phase shift mask patterning technique.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshiro Yamada, Kazuaki Chiba, Eisei Karikawa, Katsuhiro Kinemura, Masao Otaki, "Toppan's work on phase-shift mask for 64MDRAM", Proc. SPIE 2322, 14th Annual BACUS Symposium on Photomask Technology and Management, (7 December 1994); doi: 10.1117/12.195822; https://doi.org/10.1117/12.195822


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