12 December 1994 Application of IR laser light scattering for nondestructive control of near-surface regions in semiconductor substrates
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Proceedings Volume 2332, Second International Symposium on Advanced Laser Technologies; (1994) https://doi.org/10.1117/12.195885
Event: Advanced Laser Technologies: International Symposium, 1993, Prague, Czech Republic
Abstract
The method for investigation and control of large-scale recombination-active defects in near- surface regions of semiconductor wafers is proposed. The potentialities of the technique proposed are illustrated by the example of germanium single crystals.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Victor P. Kalinushkin, D. I. Murin, Vladimir A. Yuryev, Oleg V. Astafiev, A I. Buvaltsev, "Application of IR laser light scattering for nondestructive control of near-surface regions in semiconductor substrates", Proc. SPIE 2332, Second International Symposium on Advanced Laser Technologies, (12 December 1994); doi: 10.1117/12.195885; https://doi.org/10.1117/12.195885
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