12 December 1994 Application of IR laser light scattering for nondestructive control of near-surface regions in semiconductor substrates
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Proceedings Volume 2332, Second International Symposium on Advanced Laser Technologies; (1994) https://doi.org/10.1117/12.195885
Event: Advanced Laser Technologies: International Symposium, 1993, Prague, Czech Republic
Abstract
The method for investigation and control of large-scale recombination-active defects in near- surface regions of semiconductor wafers is proposed. The potentialities of the technique proposed are illustrated by the example of germanium single crystals.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Victor P. Kalinushkin, Victor P. Kalinushkin, D. I. Murin, D. I. Murin, Vladimir A. Yuryev, Vladimir A. Yuryev, Oleg V. Astafiev, Oleg V. Astafiev, A I. Buvaltsev, A I. Buvaltsev, } "Application of IR laser light scattering for nondestructive control of near-surface regions in semiconductor substrates", Proc. SPIE 2332, Second International Symposium on Advanced Laser Technologies, (12 December 1994); doi: 10.1117/12.195885; https://doi.org/10.1117/12.195885
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