Formation of ohmic contacts to Si and InP by laser-stimulated diffusion methods

G. N. Mikhailova; A. V. Chankin; E. N. Lubnin; A. L. Mikhailichenko; A. S. Seferov; A. Yu. Bonchik; S. G. Kiyak; A. V. Pokhmuskaya; Vinoy K. Jain

doi:10.1117/12.195887

12 December 1994 Formation of ohmic contacts to Si and InP by laser-stimulated diffusion methods

G. N. Mikhailova, A. V. Chankin, E. N. Lubnin, A. L. Mikhailichenko, A. S. Seferov, A. Yu. Bonchik, S. G. Kiyak, A. V. Pokhmuskaya, Vinoy K. Jain

Author Affiliations +

Proceedings Volume 2332, Second International Symposium on Advanced Laser Technologies; (1994) https://doi.org/10.1117/12.195887
Event: Advanced Laser Technologies: International Symposium, 1993, Prague, Czech Republic

Abstract

Pulsed Nd⁺³ laser and 100 W cw CO₂ laser have been used to form ohmic contacts to p-Si. The contact region consists of a layered structure of Ag(5 micrometers )/Pd(300 angstroms)/Ti(1200 angstroms)/p-Si. 1 kW cw CO₂ laser was applied to obtain ohmic contacts on Au/Au-Ge:Ni/n-InP structure. Secondary Ions Mass-Spectroscopy, Electron Auger Spectroscopy and I-V dependence measurements were carried out, and these results are presented. High-quality ohmic contacts with the resistivity of 5 X 10^-5 (Omega) (DOT) cm² can be achieved using cw CO₂ laser.

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G. N. Mikhailova, A. V. Chankin, E. N. Lubnin, A. L. Mikhailichenko, A. S. Seferov, A. Yu. Bonchik, S. G. Kiyak, A. V. Pokhmuskaya, and Vinoy K. Jain "Formation of ohmic contacts to Si and InP by laser-stimulated diffusion methods", Proc. SPIE 2332, Second International Symposium on Advanced Laser Technologies, (12 December 1994); https://doi.org/10.1117/12.195887

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