12 December 1994 Formation of ohmic contacts to Si and InP by laser-stimulated diffusion methods
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Proceedings Volume 2332, Second International Symposium on Advanced Laser Technologies; (1994) https://doi.org/10.1117/12.195887
Event: Advanced Laser Technologies: International Symposium, 1993, Prague, Czech Republic
Abstract
Pulsed Nd+3 laser and 100 W cw CO2 laser have been used to form ohmic contacts to p-Si. The contact region consists of a layered structure of Ag(5 micrometers )/Pd(300 angstroms)/Ti(1200 angstroms)/p-Si. 1 kW cw CO2 laser was applied to obtain ohmic contacts on Au/Au-Ge:Ni/n-InP structure. Secondary Ions Mass-Spectroscopy, Electron Auger Spectroscopy and I-V dependence measurements were carried out, and these results are presented. High-quality ohmic contacts with the resistivity of 5 X 10-5 (Omega) (DOT) cm2 can be achieved using cw CO2 laser.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. N. Mikhailova, A. V. Chankin, E. N. Lubnin, A. L. Mikhailichenko, A. S. Seferov, A. Yu. Bonchik, S. G. Kiyak, A. V. Pokhmuskaya, Vinoy K. Jain, "Formation of ohmic contacts to Si and InP by laser-stimulated diffusion methods", Proc. SPIE 2332, Second International Symposium on Advanced Laser Technologies, (12 December 1994); doi: 10.1117/12.195887; https://doi.org/10.1117/12.195887
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