Translator Disclaimer
12 December 1994 Formation of ohmic contacts to Si and InP by laser-stimulated diffusion methods
Author Affiliations +
Proceedings Volume 2332, Second International Symposium on Advanced Laser Technologies; (1994) https://doi.org/10.1117/12.195887
Event: Advanced Laser Technologies: International Symposium, 1993, Prague, Czech Republic
Abstract
Pulsed Nd+3 laser and 100 W cw CO2 laser have been used to form ohmic contacts to p-Si. The contact region consists of a layered structure of Ag(5 micrometers )/Pd(300 angstroms)/Ti(1200 angstroms)/p-Si. 1 kW cw CO2 laser was applied to obtain ohmic contacts on Au/Au-Ge:Ni/n-InP structure. Secondary Ions Mass-Spectroscopy, Electron Auger Spectroscopy and I-V dependence measurements were carried out, and these results are presented. High-quality ohmic contacts with the resistivity of 5 X 10-5 (Omega) (DOT) cm2 can be achieved using cw CO2 laser.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. N. Mikhailova, A. V. Chankin, E. N. Lubnin, A. L. Mikhailichenko, A. S. Seferov, A. Yu. Bonchik, S. G. Kiyak, A. V. Pokhmuskaya, and Vinoy K. Jain "Formation of ohmic contacts to Si and InP by laser-stimulated diffusion methods", Proc. SPIE 2332, Second International Symposium on Advanced Laser Technologies, (12 December 1994); https://doi.org/10.1117/12.195887
PROCEEDINGS
6 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Soft x-ray emission characteristics from laser plasma sources
Proceedings of SPIE (November 30 1991)
Laser Techniques In Photovoltaic Applications
Proceedings of SPIE (January 23 1980)
CW CO[sub]2 [/sub]Laser Annealing
Proceedings of SPIE (October 25 1983)
Laser Annealing Of Semiconductors
Proceedings of SPIE (May 14 1981)

Back to Top