Laser annealing of thin semiconductor films

Johannes Boneberg; J. Nedelcu; Ernst Bucher; Paul Leiderer

doi:10.1117/12.195876

12 December 1994 Laser annealing of thin semiconductor films

Johannes Boneberg, J. Nedelcu, Ernst Bucher, Paul Leiderer

Proceedings Volume 2332, Second International Symposium on Advanced Laser Technologies; (1994) https://doi.org/10.1117/12.195876
Event: Advanced Laser Technologies: International Symposium, 1993, Prague, Czech Republic

Abstract

Optical reflectivity and transmissivity measurements have been used to investigate the dynamics of melting and recrystallization of thin films of Si and Ge after laser-annealing with a ns Nd:YAG-laser pulse. We report on temperature dependent changes of the reflectivity of the liquid phase above and below the melting point and on various nucleation and solidification scenarios in thin films, depending on the energy density of the annealing laser.

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Johannes Boneberg, J. Nedelcu, Ernst Bucher, and Paul Leiderer "Laser annealing of thin semiconductor films", Proc. SPIE 2332, Second International Symposium on Advanced Laser Technologies, (12 December 1994); https://doi.org/10.1117/12.195876

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