12 December 1994 Laser annealing of thin semiconductor films
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Proceedings Volume 2332, Second International Symposium on Advanced Laser Technologies; (1994) https://doi.org/10.1117/12.195876
Event: Advanced Laser Technologies: International Symposium, 1993, Prague, Czech Republic
Optical reflectivity and transmissivity measurements have been used to investigate the dynamics of melting and recrystallization of thin films of Si and Ge after laser-annealing with a ns Nd:YAG-laser pulse. We report on temperature dependent changes of the reflectivity of the liquid phase above and below the melting point and on various nucleation and solidification scenarios in thin films, depending on the energy density of the annealing laser.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Johannes Boneberg, Johannes Boneberg, J. Nedelcu, J. Nedelcu, Ernst Bucher, Ernst Bucher, Paul Leiderer, Paul Leiderer, } "Laser annealing of thin semiconductor films", Proc. SPIE 2332, Second International Symposium on Advanced Laser Technologies, (12 December 1994); doi: 10.1117/12.195876; https://doi.org/10.1117/12.195876

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