12 December 1994 Novel technique for porous Si film preparation
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Proceedings Volume 2332, Second International Symposium on Advanced Laser Technologies; (1994); doi: 10.1117/12.195881
Event: Advanced Laser Technologies: International Symposium, 1993, Prague, Czech Republic
Abstract
Nucleous layer of amorphous silicon has been used for chemically etched porous Si preparation in solution HF:H2O (HF:HNO3:H2O). This effect has been utilized to produce selective-area photoemission in porous Si with submicrometer resolution for the first time. This technique can be easily incorporated into conventional semiconductor fabrication technology.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. I. Beklemyshev, V. M. Gontar, Vlad V. Levenets, I. I. Makhonin, "Novel technique for porous Si film preparation", Proc. SPIE 2332, Second International Symposium on Advanced Laser Technologies, (12 December 1994); doi: 10.1117/12.195881; https://doi.org/10.1117/12.195881
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KEYWORDS
Silicon

Etching

Luminescence

Laser applications

Fluorine

Hydrogen fluoride lasers

Semiconducting wafers

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