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14 September 1994 Characterization and modeling of base current in n-p-n polysilicon emitter bipolar transistors using low-frequency noise analysis
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Abstract
Low frequency noise measurements of n-p-n polyemitter bipolar transistors showing an increasing base current 1/f noise amplitude spanning seven orders of magnitude and increasing exponential dependence on biasing current between Ib and Ib2 with increasing emitter interfacial oxide continuity and decreasing emitter junction depth are described. Coupled with corresponding variations in linearized and large signal device characteristics, these trends lead to base voltage noise intensities that can both increase and decrease with increasing biasing current within the moderate 0.6 V < Vbe < 0.8 V biasing range. This behavior has not been previously attributed to the combination of fundamental base current noise and its noise voltage transfer function explicitly, but has importance to the assessment and accurate modeling of polyemitter transistor noise performance in shallow emitter transistors. The large range and high resolution of these features also imply that low frequency noise may be useful in characterizing the structure of the broken emitter interfacial oxide layer and its electrical properties.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David Quon, Yang Hua Chang, Gregory J. Sonek, and Guann-pyng Li "Characterization and modeling of base current in n-p-n polysilicon emitter bipolar transistors using low-frequency noise analysis", Proc. SPIE 2334, Microelectronics Manufacturability, Yield, and Reliability, (14 September 1994); https://doi.org/10.1117/12.186749
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