Effects of P+-implanted poly-Si gate with and without TiSi2 on the injection degradation of thin film oxides

Victor M. Ivkin; Valentin V. Baranov

doi:10.1117/12.186747

14 September 1994 Effects of P⁺-implanted poly-Si gate with and without TiSi2 on the injection degradation of thin film oxides

Victor M. Ivkin, Valentin V. Baranov

Author Affiliations +

Proceedings Volume 2334, Microelectronics Manufacturability, Yield, and Reliability; (1994) https://doi.org/10.1117/12.186747
Event: Microelectronic Manufacturing, 1994, Austin, TX, United States

Abstract

Constant current Fowler-Nordheim electron injection experiments were performed on Si/SiO₂/poly-Si structures with and without a TiSi₂ superlayer. It has been shown that phosphorus atoms implanted into the 3500 A thick poly-Si to a dose (3-9)*10¹⁵ cm² followed by the 850 degree(s)C - 950 degree(s)C post implantation anneal lead to the deterioration of electrophysical characteristics of the MOS-capacitors on the one hand and on the other hand result in an improvement of the endurance against hot electron injection. Sintering of 200 A Ti at various (700 degree(s)C - 850 degree(s)C) temperatures to form TiSi₂ leads to the decrease (about three times) in the sheet resistance of polycide gate and does not effect the metal-semiconductor work function. To explain these phenomena we consider two mechanisms of electronic defects appearing and disappearing. The first mechanism is connected with the Si-P bonds creation that have a larger binding energy than the Si-Si, Si-H, Si-OH bonds. The other one takes into account H-ions generation at the poly-Si/SiO₂ interface and either the Si defects possivation or the Si-Si and Si-O bonds cleavage by them.

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Victor M. Ivkin and Valentin V. Baranov "Effects of P⁺-implanted poly-Si gate with and without TiSi2 on the injection degradation of thin film oxides", Proc. SPIE 2334, Microelectronics Manufacturability, Yield, and Reliability, (14 September 1994); https://doi.org/10.1117/12.186747

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