14 September 1994 Effects of resist strip processing damage on the electrical characteristics of 0.8-um a-Si antifuse circuit elements
Author Affiliations +
Abstract
Field-programmable ASICs have been implemented using a variety of programmable circuit elements, including SRAM, EPROM, E2PROM, and antifuse cells. Amorphous silicon (a-Si) antifuse cells offer greater packing densities and superior performance compared to cells based on memory elements, and they can be integrated into conventional multi-layer integrated circuits with the addition of several process modules. Despite their advantages, a potential yield issue with a-Si antifuses is that their electrical characteristics can be affected by damage from manufacturing processes. In this study, it is found that the programming voltage is reduced when a solvent-based post-resist strip solution is applied to the bottom electrode layer of TiW. Atomic-force microscopy (AFM) shows that the resist strip solution increases the micro-roughness of TiW films. It is also found that the `off-'state leakage current increases when the solution is applied to the a-Si antifuse layer. The amount of the leakage current increase is related to the amount of a-Si loss due to the strip solution.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Felix Fujishiro, Landon B. Vines, K. S. Ravindhran, Yu-Pin Han, Danny Echtle, Annette Garcia, Brian Richardson, Milind Weling, James Hickey, Ying-Tsong Loh, "Effects of resist strip processing damage on the electrical characteristics of 0.8-um a-Si antifuse circuit elements", Proc. SPIE 2334, Microelectronics Manufacturability, Yield, and Reliability, (14 September 1994); doi: 10.1117/12.186738; https://doi.org/10.1117/12.186738
PROCEEDINGS
9 PAGES


SHARE
Back to Top