14 September 1994 Effects of resist strip processing damage on the electrical characteristics of 0.8-um a-Si antifuse circuit elements
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Abstract
Field-programmable ASICs have been implemented using a variety of programmable circuit elements, including SRAM, EPROM, E2PROM, and antifuse cells. Amorphous silicon (a-Si) antifuse cells offer greater packing densities and superior performance compared to cells based on memory elements, and they can be integrated into conventional multi-layer integrated circuits with the addition of several process modules. Despite their advantages, a potential yield issue with a-Si antifuses is that their electrical characteristics can be affected by damage from manufacturing processes. In this study, it is found that the programming voltage is reduced when a solvent-based post-resist strip solution is applied to the bottom electrode layer of TiW. Atomic-force microscopy (AFM) shows that the resist strip solution increases the micro-roughness of TiW films. It is also found that the `off-'state leakage current increases when the solution is applied to the a-Si antifuse layer. The amount of the leakage current increase is related to the amount of a-Si loss due to the strip solution.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Felix Fujishiro, Felix Fujishiro, Landon B. Vines, Landon B. Vines, K. S. Ravindhran, K. S. Ravindhran, Yu-Pin Han, Yu-Pin Han, Danny Echtle, Danny Echtle, Annette Garcia, Annette Garcia, Brian Richardson, Brian Richardson, Milind Weling, Milind Weling, James Hickey, James Hickey, Ying-Tsong Loh, Ying-Tsong Loh, } "Effects of resist strip processing damage on the electrical characteristics of 0.8-um a-Si antifuse circuit elements", Proc. SPIE 2334, Microelectronics Manufacturability, Yield, and Reliability, (14 September 1994); doi: 10.1117/12.186738; https://doi.org/10.1117/12.186738
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