14 September 1994 Exoelectron emission testing of technology inserting point defects into semiconductors
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Abstract
Exoelectr on anal yzes C EAD of poi nt defects both i n crystalline and amorphous semiconductors is considered. The below concentrati on threshol ds of poi nt defects and Ion—implanted impurities that may be estimated by this method are 17 -3 13 1 -310 .. . 10 cm and 10 . . . 10 cm , correspondingly. Keywords: point defects, testing, semiconductors, exoelectron anal yzes.
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Yuri Dekhtyar, "Exoelectron emission testing of technology inserting point defects into semiconductors", Proc. SPIE 2334, Microelectronics Manufacturability, Yield, and Reliability, (14 September 1994); doi: 10.1117/12.186740; https://doi.org/10.1117/12.186740
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