14 September 1994 Exoelectron emission testing of technology inserting point defects into semiconductors
Author Affiliations +
Abstract
Exoelectr on anal yzes C EAD of poi nt defects both i n crystalline and amorphous semiconductors is considered. The below concentrati on threshol ds of poi nt defects and Ion—implanted impurities that may be estimated by this method are 17 -3 13 1 -310 .. . 10 cm and 10 . . . 10 cm , correspondingly. Keywords: point defects, testing, semiconductors, exoelectron anal yzes.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuri Dekhtyar, Yuri Dekhtyar, } "Exoelectron emission testing of technology inserting point defects into semiconductors", Proc. SPIE 2334, Microelectronics Manufacturability, Yield, and Reliability, (14 September 1994); doi: 10.1117/12.186740; https://doi.org/10.1117/12.186740
PROCEEDINGS
7 PAGES


SHARE
Back to Top