14 September 1994 In-line monitoring of thin oxide on production wafers using large scribe line capacitors
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In order to guarantee oxide quality for non-volatile memory devices, it is important to be able to monitor defectivity at end-of-line parameter testing. This is the only place where we can screen out the intermediate defectivity which electrical testing cannot detect on all wafers processed. The traditional reliability monitors cannot address this application due to their small sample size, long test time and high cost. In this work, an end-of-line monitor using four scribe line capacitors is proposed. Two gate oxide and two interpoly dielectric structures can be easily measured at parameter testing. Both protected and unprotected capacitors are used to separate out charging effects. These structures can be measured in line after gate definition and can be used to supplement standard gate oxide monitors (GOMs). Using this approach we can quickly detect and correct any deviations in the process that determine oxide quality.
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Luca Perego, Luca Perego, Martin Duncan, Martin Duncan, } "In-line monitoring of thin oxide on production wafers using large scribe line capacitors", Proc. SPIE 2334, Microelectronics Manufacturability, Yield, and Reliability, (14 September 1994); doi: 10.1117/12.186743; https://doi.org/10.1117/12.186743

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