Influence of quartz glass on silicon wafers during thermal processing

Dietmar Hellmann; Thomas Falter; Rudolf Berger; Edmund Burte

doi:10.1117/12.186746

14 September 1994 Influence of quartz glass on silicon wafers during thermal processing

Dietmar Hellmann, Thomas Falter, Rudolf Berger, Edmund Burte

Proceedings Volume 2334, Microelectronics Manufacturability, Yield, and Reliability; (1994) https://doi.org/10.1117/12.186746
Event: Microelectronic Manufacturing, 1994, Austin, TX, United States

Abstract

The impact of two different quartzglass materials, electric fused (E-material) and flame fused (F-material) on silicon and silicon devices has been investigated, by performing a test process consisting of oxidation, well drive-in and gate oxide. Thereby silicon wafers had direct contact (boat-simulation) and proximity contact (tube-simulation) with the quartz. Metal contamination induced defects have been evaluated using photocurrent imaging (Elymat) for bulk recombination centers and near-surface precipitates together with E-ramp breakdown on gate oxides. The results of both tests indicate a significantly lower impact of flame fused quartzglass material on bulk as well as on surface of silicon and properties of silicon and silicon test devices.

Citation Download Citation

Dietmar Hellmann, Thomas Falter, Rudolf Berger, and Edmund Burte "Influence of quartz glass on silicon wafers during thermal processing", Proc. SPIE 2334, Microelectronics Manufacturability, Yield, and Reliability, (14 September 1994); https://doi.org/10.1117/12.186746

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