Statistical metrology for interlevel dielectric thickness variation

Duane S. Boning; Tinaung Maung; James E. Chung; Keh-Jeng Chang; Soo-Young Oh; Dirk Bartelink

doi:10.1117/12.186764

14 September 1994 Statistical metrology for interlevel dielectric thickness variation

Duane S. Boning, Tinaung Maung, James E. Chung, Keh-Jeng Chang, Soo-Young Oh, Dirk Bartelink

Proceedings Volume 2334, Microelectronics Manufacturability, Yield, and Reliability; (1994) https://doi.org/10.1117/12.186764
Event: Microelectronic Manufacturing, 1994, Austin, TX, United States

Abstract

Statistical metrology seeks to assess the sources and magnitude of variation in semiconductor manufacturing. The methodology emphasizes electrical measurements resulting from short process flows, statistical design of experiments and analysis of data, and close coupling to technology computer aided design tools for the interpretation of data. In this paper, we apply statistical metrology to interlevel dielectric thickness variation. Capacitive test structures, in conjunction with resistive line width structures and two-dimensional capacitance simulations, are used to estimate ILD thickness for a variety of layout and process factors in a poly-metal BPSG planarization process. The methodology is successful in highlighting the key factors, including underlying structure line width spacing,and finger length that impact ILD thickness. Future work will examine other planarization processes, including chemical mechanical polishing.

Citation Download Citation

Duane S. Boning, Tinaung Maung, James E. Chung, Keh-Jeng Chang, Soo-Young Oh, and Dirk Bartelink "Statistical metrology for interlevel dielectric thickness variation", Proc. SPIE 2334, Microelectronics Manufacturability, Yield, and Reliability, (14 September 1994); https://doi.org/10.1117/12.186764

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