Yield enhancement by modification of wet oxide strip processes

Israel Rotstein; Eitan N. Shauly

doi:10.1117/12.186745

14 September 1994 Yield enhancement by modification of wet oxide strip processes

Israel Rotstein, Eitan N. Shauly

Proceedings Volume 2334, Microelectronics Manufacturability, Yield, and Reliability; (1994) https://doi.org/10.1117/12.186745
Event: Microelectronic Manufacturing, 1994, Austin, TX, United States

Abstract

The purpose of this work was to reduce isolation oxide defect density and improve gate oxide integrity by modification of wet oxide strip and pre-diffusion clean. Work was done on 1.0 micrometers and 0.8 micrometers M²CMOS twin-well technology. Twin-wells are defined by local oxidation process using nitride layer. Active area is also defined by local oxidation. MOS gate is built of POCl₃ doped polysilicon on top of 185A oxide.

Citation Download Citation

Israel Rotstein and Eitan N. Shauly "Yield enhancement by modification of wet oxide strip processes", Proc. SPIE 2334, Microelectronics Manufacturability, Yield, and Reliability, (14 September 1994); https://doi.org/10.1117/12.186745

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