14 September 1994 Yield enhancement by modification of wet oxide strip processes
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Abstract
The purpose of this work was to reduce isolation oxide defect density and improve gate oxide integrity by modification of wet oxide strip and pre-diffusion clean. Work was done on 1.0 micrometers and 0.8 micrometers M2CMOS twin-well technology. Twin-wells are defined by local oxidation process using nitride layer. Active area is also defined by local oxidation. MOS gate is built of POCl3 doped polysilicon on top of 185A oxide.
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Israel Rotstein, Israel Rotstein, Eitan N. Shauly, Eitan N. Shauly, } "Yield enhancement by modification of wet oxide strip processes", Proc. SPIE 2334, Microelectronics Manufacturability, Yield, and Reliability, (14 September 1994); doi: 10.1117/12.186745; https://doi.org/10.1117/12.186745
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