14 September 1994 Yield enhancement by modification of wet oxide strip processes
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The purpose of this work was to reduce isolation oxide defect density and improve gate oxide integrity by modification of wet oxide strip and pre-diffusion clean. Work was done on 1.0 micrometers and 0.8 micrometers M2CMOS twin-well technology. Twin-wells are defined by local oxidation process using nitride layer. Active area is also defined by local oxidation. MOS gate is built of POCl3 doped polysilicon on top of 185A oxide.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Israel Rotstein, Israel Rotstein, Eitan N. Shauly, Eitan N. Shauly, } "Yield enhancement by modification of wet oxide strip processes", Proc. SPIE 2334, Microelectronics Manufacturability, Yield, and Reliability, (14 September 1994); doi: 10.1117/12.186745; https://doi.org/10.1117/12.186745

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