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9 September 1994 Analytic models and parametric investigations of IBE and RIE mechanisms for GaAs compounds
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Abstract
This work introduces a comprehensive analytic model of the sputtering mechanism present in ion beam etching and reactive ion etching processes. Our final objective is to correlate the etch rate to the plasma reactor parameters. Experimental verifications for GaAs etching show a good agreement for ion beam etching. In the case of reactive ion etching, the imperfect agreement is explained by the influence of effects such as flow rate and temperature not taken into account in the theoretical approach. We also present parametric investigations of GaAs etched in SiCl4 plasma.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Ketata, Serge Koumetz, Mohamed Ketata, and Roland Debrie "Analytic models and parametric investigations of IBE and RIE mechanisms for GaAs compounds", Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994); https://doi.org/10.1117/12.186057
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