Paper
9 September 1994 Crystal-free and low-flow-angle ILD by using in situ SACVD/PE BPSG for 0.5-um application
Hung-Chi Yen, Ben-Yih Jin, Cliff Wong, Peter Chow, Daniel Yen, Joseph Hu, Joe S. Su, Jean Wang
Author Affiliations +
Abstract
As the technology pushes down to half-micron or below, a low flow angle BPSG film for pre- metal dielectric (PMD) becomes necessary. With high BP concentration BPSG, for example 4 X 6, low flow angle can be achieved after proper reflow. The drawback is that, frequently, BPSG crystal appears at smaller poly spacing. The combined sub-atmosphere chemical vapor deposition (SACVD) and BPSG films through in-situ deposition in applied materials P-5000D system was implemented to not only improve reflow angle but also suppress the crystal formation at any poly space. A crystal-free with 11 degree(s) flow angle PMD was achieved by using 4KA SACVD and 5KA BPSG over 6000A poly lines. A detailed SACVD/BPSG process and the comparison of BPSG reflow characterization with and without SACVD are presented.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hung-Chi Yen, Ben-Yih Jin, Cliff Wong, Peter Chow, Daniel Yen, Joseph Hu, Joe S. Su, and Jean Wang "Crystal-free and low-flow-angle ILD by using in situ SACVD/PE BPSG for 0.5-um application", Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994); https://doi.org/10.1117/12.186062
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Cited by 2 scholarly publications.
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KEYWORDS
Crystals

Plasma enhanced chemical vapor deposition

Oxides

Chemical vapor deposition

Dielectrics

Chemical mechanical planarization

Deposition processes

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