9 September 1994 Improved aluminum plug process for submicron via filling
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Abstract
Aluminum plug process for submicron via filling can be improved by using conventional sputtering machine and multi-step deposition process. It is found that the first-step aluminum deposition greatly impacts via step coverage. The effect of this first step metal thickness is more dramatic at higher deposition temperature. Our experiments show that it is necessary to have a continuous Al film in the vias to fully cover the sidewall and bottom at the early stage of the deposition, so that the bulk material can flow in during deposition to fill the vias. The improved process has been successfully implemented in volume production of 0.6 micrometers ASIC and 0.6 micrometers SRAM technologies.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hong Yang, Hong Yang, Yih-Shung Lin, Yih-Shung Lin, Loc Nguyen, Loc Nguyen, De-Dui Liao, De-Dui Liao, J. Worley, J. Worley, Greg Smith, Greg Smith, Fu-Tai Liou, Fu-Tai Liou, "Improved aluminum plug process for submicron via filling", Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994); doi: 10.1117/12.186052; https://doi.org/10.1117/12.186052
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