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9 September 1994 Issues associated with submicron via formation
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The relationship between plasma etch chemistry and via resistance has been investigated. A gas mixture of Ar/CF4/CHF3 yields lower via resistance than Ar/CF4. However, decreasing the overetch of the Ar/CF4 process improves resistance and failure rate. A longer DI water rinse after solvent strip improves via resistance and failure rate by either dissolution of aluminum fluoride, or corrosion of the aluminum under the via lifting out the organometallic polymer. Higher deep UV photostabilization temperature before etch gives a lower via failure rate with tighter distributions. XPS results show that the Ar/CF4 gas chemistry increases sputtering of aluminum out of the vias during overetch, increasing the amount of aluminum fluoride present, which correlates with the worsened via resistance observed.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kevin C. Brown and Estrella Alarcon "Issues associated with submicron via formation", Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994);

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