9 September 1994 New conception in transistor technology using nonhomogenous temperature field
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Abstract
The present paper contains theoretical investigation or the possibili iy 'oritr:'1i1n, the impurity concentration distribution iribLue ci JI!t £1e1.d—rrn u t,iit tLL.it1L(Jfl equin is aen into account . The Three , acting on impar ty atoms , results roii the temperature gradient or the crystalline lattice. The expression ror heat or transport Is obtained rrorn rnicroscopc theory. Calculations ror concrete impurities show that concentration of impurities near maximum temperature can either increase (0, In, Sb) or decrease (B, P3 C) , deieni.rig on the erfeotive S1ZCS 01° the impurity atois and on their interaction With crystal lattice. Calculation UP B and Sb Iflipurities ifl • SiliCOfl at Ufliroflhl fld equal their initial concentration IS perrorned. Redistribution or these impurltles arter temperature 1eld With maximal temperature at the crystal sarrce 1s appli ed resui ts In creation or p—n junction near the surrace. Similarly, the p—n—p structure ifl volume of the crystal is created w:er tb temperature maximum is located there . Strongly absorbed laser radiation can be used to reach appropriate temperature gradient near the surrace.
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J. Kaupuzs, J. Kaupuzs, Arthur Medvids, Arthur Medvids, } "New conception in transistor technology using nonhomogenous temperature field", Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994); doi: 10.1117/12.186069; https://doi.org/10.1117/12.186069
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