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9 September 1994 New route to thermal dry-etching of copper using hydrogen peroside (H2O2) and hexafluoroacetylacetone (HFACH)
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Abstract
Here we report a new thermal dry etch process for copper using hydrogen peroxide (H2O2) and hexafluoroacetylacetone (hfacH). The H2O2 oxidizes copper to form either copper(I)oxide or copper(II)oxide depending on the etch temperature followed by removal of the copper oxide by hfacH resulting in formation of volatile copper(bis- hexafluoroacetylacetonate) [Cu(hfac)2] etch species and water. Copper has been successfully etched by this process at temperatures as low as 150 degree(s)C and etch rates of up to approximately micrometers /min at 190 degree(s)C.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ajay Jain, Toivo T. Kodas, and Mark J. Hampden-Smith "New route to thermal dry-etching of copper using hydrogen peroside (H2O2) and hexafluoroacetylacetone (HFACH)", Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994); https://doi.org/10.1117/12.186073
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