9 September 1994 Planarization using chemical mechanical planarization (CMP) on a 16-megabit SRAM with quadruple polysilicon stacks
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Abstract
Chemical mechanical planarization (CMP) has been used to fabricate a 0.35 micrometers 16 Meg SRAM with quadruple polysilicon stacks. The use of CMP results in complete planarization of over one micron of topography. CMP planarization results in improved photolithography depth of field when compared to standard resist etchback planarization (REB). Data from a lot processed using CMP at contact dielectric and interlayer dielectric is compared to a lot that was processed using standard REB for planarization.
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Kathleen A. Perry, Kathleen A. Perry, Sandya Radhakrishna, Sandya Radhakrishna, Craig Lage, Craig Lage, Franklin Nkansah, Franklin Nkansah, Victor Pol, Victor Pol, Thom Kobayashi, Thom Kobayashi, Jeff P. West, Jeff P. West, Phil Crabtree, Phil Crabtree, } "Planarization using chemical mechanical planarization (CMP) on a 16-megabit SRAM with quadruple polysilicon stacks", Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994); doi: 10.1117/12.186054; https://doi.org/10.1117/12.186054
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