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9 September 1994 Plasma etching of high-temperature-deposited AlSiCu for submicron ULSI manufacturing
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To achieve good step coverage for submicron contacts/vias, many approaches have been taken in recent years in VLSI production. While CVD tungsten plug is widely implemented in the U.S. for submicron manufacturing, planarized aluminum plug (i.e., high temperature aluminum deposition) is slowly emerging for its process simplicity and low wafer cost. In this paper, we present the plasma etching studies on the high-temperature-deposited AlSiCu (or hot aluminum) and its application in manufacturing of ULSICs with 0.6 micrometers design rules. The etchability and manufacturability of this high-temperature-deposited AlSiCu have been proven and demonstrated with submicron metal lines. Various aspects of the hot aluminum etching, including profile control, residue, microloading, and resist selectivity, are discussed in detail.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lianjun Liu, Fang Hong Gn, Ronfu Chu, and Che-Chia Wei "Plasma etching of high-temperature-deposited AlSiCu for submicron ULSI manufacturing", Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994);

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