Submicron-size laser treatment of the solid state surface

Vasily V. Valyavko; Vladimir P. Osipov

doi:10.1117/12.186068

9 September 1994 Submicron-size laser treatment of the solid state surface

Vasily V. Valyavko, Vladimir P. Osipov

Proceedings Volume 2335, Microelectronics Technology and Process Integration; (1994) https://doi.org/10.1117/12.186068
Event: Microelectronic Manufacturing, 1994, Austin, TX, United States

Abstract

A method of producing submicron (hundreds of nanometers and less) periodical structures on the solid state surface by means of one-pulse laser radiation treatment is developed. The resulting structures look like a system of narrow parallel equidistant grooves. Before a treatment the surface may be covered by one of several thin layers to be destroyed. It is possible to obtain the grooves, a width of which is from 10 to 100 times less than the wavelength of used laser radiation. It is possible to vary the distance between the grooves in a wide range. When a carbon dioxide TEA-laser (0.2 joule-energy, 10.6 micron-wavelength) was used for the treatment of samples (800 angstrom-aluminum film evaporated on the optical glass plates) periodical structures looking like a system of narrow parallel equidistant grooves were produced on an area with a diameter of about 2 mm. The width of the grooves was less than 0.3 micron and a distance between the grooves varied from 7 to 500 microns. Therefore this method has enabled us to obtain grooves with a width about 30 times less than the wavelength of the laser radiation used.

Citation Download Citation

Vasily V. Valyavko and Vladimir P. Osipov "Submicron-size laser treatment of the solid state surface", Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994); https://doi.org/10.1117/12.186068

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