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9 September 1994 Surface charging effect on microloading for sub-quarter-micron contact etching
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Abstract
Surface charging effect on microloading has been observed using both undoped and doped polysilicon hard mask for sub-quarter-micron contact etching in a MERIE. Surface charging on the undoped polysilicon mask due to non-uniform plasma has caused severe microloading. However, doped polysilicon mask has been very effective to suppress microloading effect up to 0.1 micrometers , because no charge builds up on the surface of the mask. In case of undoped polysilicon mask, both surface charging and microloading effect could be reduced by either decreasing B-field or increasing pressure and gas flow, which improves plasma uniformity.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ki-Soo Shin, Hae-Sung Park, and Soo-Han Choi "Surface charging effect on microloading for sub-quarter-micron contact etching", Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994); doi: 10.1117/12.186074; https://doi.org/10.1117/12.186074
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