Paper
16 September 1994 Model-based equipment diagnosis
David J. Collins, Andrzej J. Strojwas, P. K. Mozumder
Author Affiliations +
Abstract
A versatile methodology is described in which equipment models have been incorporated into a single process diagnostic system for the PECVD of silicon nitride. The diagnosis system has been developed and tested with data collected using an Applied Materials Precision 5000 single wafer reactor. The parametric equipment diagnosis system provides the basis for optimal control of multiple process responses by the classification of potential sources of equipment faults without the assistance of in-situ sensor data. The basis for the diagnosis system is the use of tuned empirical equipment models which have been developed using a physically-based experimental design. Nine individual site-specific models were used to provide an effective method of modeling the spatially-dependent process variations across the wafer with better sensitivity than mean-based models. The diagnostic system has been tested using data that was produced by adjusting the actual equipment controls to artificially simulate a variety of possible subtle equipment drifts and shifts. Statistical algorithms have been implemented which detect equipment drift, shift and variance stability faults using the difference between the predicted process responses to the off-line measured process responses. Fault classification algorithms have been developed to classify the most likely causes for the process drifts and shifts using a pattern recognition system based upon flexible discriminant analysis.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David J. Collins, Andrzej J. Strojwas, and P. K. Mozumder "Model-based equipment diagnosis", Proc. SPIE 2336, Manufacturing Process Control for Microelectronic Devices and Circuits, (16 September 1994); https://doi.org/10.1117/12.186776
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Cited by 7 scholarly publications.
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KEYWORDS
Instrument modeling

Semiconducting wafers

Data modeling

Diagnostics

Process control

Plasma enhanced chemical vapor deposition

Refractive index

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