16 September 1994 Pulse-modulated infrared-laser interferometric thermometry for Si substrate temperature measurement
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Abstract
We present a simple optical interferometric technique for measuring temperatures of semiconductor substrates. This technique determines the direction of temperature change from two interferograms, one is an original interferogram and the other is a slightly phase-shifted interferogram due to a small decrease in a wavelength of a pulse- modulated infrared semiconductor laser immediately after the laser was turned on. We measured temperature of a Si wafer during an arbitrary change of heating and cooling.
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Jun Kikuchi, Jun Kikuchi, Ryo Kurosaki, Ryo Kurosaki, Shuzo Fujimura, Shuzo Fujimura, Hiroshi Yano, Hiroshi Yano, } "Pulse-modulated infrared-laser interferometric thermometry for Si substrate temperature measurement", Proc. SPIE 2336, Manufacturing Process Control for Microelectronic Devices and Circuits, (16 September 1994); doi: 10.1117/12.186778; https://doi.org/10.1117/12.186778
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