14 September 1994 Characterization of polycrystalline silicon grain boundary structures by optical second harmonic generation
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Abstract
Grain boundary contributions to optical second harmonic generation from polycrystalline silicon samples have been investigated. An extremely high second harmonic signal, oppose to that from the single crystal silicon samples, was observed in undoped poly-Si samples. The high intensity of SHG signal is attributed tot he nonlinear susceptibility modulated by the electric-dipole contribution of dangling bonds at grain boundaries. This explanation is confirmed by the dependence of SHG signal on polysilicon processed with hydrogen plasma treatment and high temperature annealing. The effect of dopant segregation at grain boundaries on the SHG has been investigated on different grain structures.
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Chun Hu, Chun Hu, Truc Q. Vu, Truc Q. Vu, Guann-pyng Li, Guann-pyng Li, } "Characterization of polycrystalline silicon grain boundary structures by optical second harmonic generation", Proc. SPIE 2337, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing, (14 September 1994); doi: 10.1117/12.186633; https://doi.org/10.1117/12.186633
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