Limitations of submicron holographic lithography

Ray T. Chen

doi:10.1117/12.186639

14 September 1994 Limitations of submicron holographic lithography

Ray T. Chen

Proceedings Volume 2337, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing; (1994) https://doi.org/10.1117/12.186639
Event: Microelectronic Manufacturing, 1994, Austin, TX, United States

Abstract

Hologram recording geometry using total internal reflection (TIR) from a photo sensitive material surface was used to achieve 0.5 micron resolution at (lambda) equals 457 nm with a readout of reconstructed image on photoresist. Such a geometry has demonstrated stability to parallel displacement within the illuminated area, and a rotation of +/- 2 degrees. The TIR recording system provided double fringe sets for each plane component inside the volume hologram. Therefore, diffraction efficiency as high as 80% was observed. The result is applicable to high volume submicron lithography and can be expanded for an eight-inch semiconductor submicron pattern. The use of a large aperture, well collimated laser beam provides us with much higher throughput than existing lightography machines have.

Citation Download Citation

Ray T. Chen "Limitations of submicron holographic lithography", Proc. SPIE 2337, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing, (14 September 1994); https://doi.org/10.1117/12.186639

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