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14 September 1994 Passive optical detection of ion implantation processing
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We report on the application of optical surface photovoltage (SPV) to both quantify and qualify two problems which occur during ion implantation in CZ P-type silicon. The first issue is the problem of heavy metal contaminants such as Fe being deposited into the bulk from both the front and back sides of the wafer. Our second issue examines in-line use of SPV for monitoring the presence of nonelectrostatic charge induced by ions deposited from implant processing. Most electrostatic charge from implants has been modified by the use of an electron shower or 'flood gun'. Here we will examine how effective this tool is for modifying ionic charge. We will also show how the SPV technique can be used for postprocessing assessment of contaminant build-up and instrument qualification or monitoring.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mohammed Anjum, Valerie Wenner, and John K. Lowell "Passive optical detection of ion implantation processing", Proc. SPIE 2337, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing, (14 September 1994);

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