14 September 1994 Photocurrent imaging of silicon wafers using electrolyte contacts
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Abstract
The photocurrent response of Silicon wafers scanned by laser beams of variable wavelength and intensity is evaluated to assess process-induced defects in their lateral and in-depth distribution, as well as in their chemical nature. Large-area transparent contacts to bare wafers, for current collection and surface passivation, are made by electrolyte chambers (ELYMAT principle). The application of the analytical technique is discussed for a variety of process development tasks, among them evaluation of quartz quality impact on bulk minority carrier lifetime and surface-near defect formation, intrinsic gettering and DZ characterization, as well as oxide interface quality.
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Thomas Falter, Dietmar Hellmann, Peter Eichinger, "Photocurrent imaging of silicon wafers using electrolyte contacts", Proc. SPIE 2337, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing, (14 September 1994); doi: 10.1117/12.186635; https://doi.org/10.1117/12.186635
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KEYWORDS
Semiconducting wafers

Silicon

Metals

Semiconductor lasers

Diffusion

Contamination

Interfaces

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