12 October 1994 Photo-assisted phase transition in antiferroelectric thin films for optical switching and storage
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Proceedings Volume 2338, 1994 Topical Meeting on Optical Data Storage; (1994) https://doi.org/10.1117/12.190180
Event: Optical Data Storage '94, 1994, Dana Point, CA, United States
Abstract
It is known that significant change of birefringence accompanies field- induced antiferroelectric-to ferroelectric phase transition in antiferroelectric thin films. When an antiferroelectric lead zirconate titanate (PZT) thin film material was bounded by a semiconducting indium-tin oxide (ITO) layer, however, the phase transition was suppressed by an effect of the PZT-ITO interface. Radiation of near- ultraviolet light has shown to be effective in eliminating the interfacial suppression to the phase transition. This phenomenon has furnished a UV-activated birefringence in the PZT thin films for optical switching and storage.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Feiling Wang, Gene H. Haertling, Kewen K. Li, "Photo-assisted phase transition in antiferroelectric thin films for optical switching and storage", Proc. SPIE 2338, 1994 Topical Meeting on Optical Data Storage, (12 October 1994); doi: 10.1117/12.190180; https://doi.org/10.1117/12.190180
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