12 October 1994 Photo-assisted phase transition in antiferroelectric thin films for optical switching and storage
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Proceedings Volume 2338, 1994 Topical Meeting on Optical Data Storage; (1994) https://doi.org/10.1117/12.190180
Event: Optical Data Storage '94, 1994, Dana Point, CA, United States
Abstract
It is known that significant change of birefringence accompanies field- induced antiferroelectric-to ferroelectric phase transition in antiferroelectric thin films. When an antiferroelectric lead zirconate titanate (PZT) thin film material was bounded by a semiconducting indium-tin oxide (ITO) layer, however, the phase transition was suppressed by an effect of the PZT-ITO interface. Radiation of near- ultraviolet light has shown to be effective in eliminating the interfacial suppression to the phase transition. This phenomenon has furnished a UV-activated birefringence in the PZT thin films for optical switching and storage.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Feiling Wang, Feiling Wang, Gene H. Haertling, Gene H. Haertling, Kewen K. Li, Kewen K. Li, "Photo-assisted phase transition in antiferroelectric thin films for optical switching and storage", Proc. SPIE 2338, 1994 Topical Meeting on Optical Data Storage, (12 October 1994); doi: 10.1117/12.190180; https://doi.org/10.1117/12.190180
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