4 January 1995 Direct electro-optic measurement of the internal fields of GaAs photoconductive switches
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Proceedings Volume 2343, Optically Activated Switching IV; (1995) https://doi.org/10.1117/12.198645
Event: Photonics for Industrial Applications, 1994, Boston, MA, United States
Abstract
The electric fields of bulk (100) and surface (111) GaAs high-voltage photoconductive switches were imaged utilizing the electro-optic effect of the semi-insulating GaAs substrate. Experimental methodology for obtaining the images is described along with a self-calibrating data reduction algorithm. Use of the technique for observing fabrication defects and time dependent field nonuniformities is shown.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Aaron Falk, Jeff C. Adams, C. David Capps, Stuart G. Ferrier, Jeffrey A. Krinsky, "Direct electro-optic measurement of the internal fields of GaAs photoconductive switches", Proc. SPIE 2343, Optically Activated Switching IV, (4 January 1995); doi: 10.1117/12.198645; https://doi.org/10.1117/12.198645
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