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4 January 1995 Optical switching of bipolar-mode field effect transistors
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Proceedings Volume 2343, Optically Activated Switching IV; (1995) https://doi.org/10.1117/12.198651
Event: Photonics for Industrial Applications, 1994, Boston, MA, United States
Abstract
We show the feasibility of an optically controlled silicon Bipolar Mode Field Effect Transistor (BMFET) to switch high electrical powers up to 1 kW by exploiting a 25 mW laser diode. We have compared the performance of the BMFET with that of a commercial high power bipolar junction transistor (BJT). Under the same illumination conditions, the switching power of the BMFET has been always higher than that of the BJT by a factor greater than one order of magnitude.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Giovanni Breglio, Antonello Cutolo, Paolo Spirito, and Luigi Zeni "Optical switching of bipolar-mode field effect transistors", Proc. SPIE 2343, Optically Activated Switching IV, (4 January 1995); https://doi.org/10.1117/12.198651
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