4 January 1995 Supralinear photoconductivity of copper-doped gallium arsenide
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Proceedings Volume 2343, Optically Activated Switching IV; (1995) https://doi.org/10.1117/12.198667
Event: Photonics for Industrial Applications, 1994, Boston, MA, United States
Abstract
We report on the intensity dependent supralinear photoconductivity in GaAs:Si:Cu material. The results of our measurements show that the effective carrier lifetime can change over two orders of magnitude with variations in the intensity of the optical excitation. Numerical simulations have also been carried out to analyze the effect. The intensity dependent lifetimes obtained from the simulations match the experiments very well. Such a nonlinear intensity dependence could have possible low-energy phototransistor applications.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Karl H. Schoenbach, Ravindra P. Joshi, Frank E. Peterkin, "Supralinear photoconductivity of copper-doped gallium arsenide", Proc. SPIE 2343, Optically Activated Switching IV, (4 January 1995); doi: 10.1117/12.198667; https://doi.org/10.1117/12.198667
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