Doping of ZnSe using gas source molecular beam epitaxy

Easen Ho; P. A. Fisher; J. L. House; Gale S. Petrich; Leslie A. Kolodziejski

doi:10.1117/12.197266

21 December 1994 Doping of ZnSe using gas source molecular beam epitaxy

Easen Ho, P. A. Fisher, J. L. House, Gale S. Petrich, Leslie A. Kolodziejski

Proceedings Volume 2346, II-VI Blue/Green Laser Diodes; (1994) https://doi.org/10.1117/12.197266
Event: Photonics for Industrial Applications, 1994, Boston, MA, United States

Abstract

Gas source molecular beam epitaxy (GSMBE) of ZnSe has been performed with emphasis in understanding the incorporation of substitutional donor and acceptor impurity species. Elemental Zn and hydrogen selenide provide the constituent species, whereas ZnCl₂ and nitrogen gas, combined with the use of a radio frequency plasma cell, provide the dopant species for n- and p-type ZnSe, respectively. The hydrogenation behavior of ZnSe:Cl and ZnSe:N are compared, and we have found that the presence of hydrogen does not significantly affect the electrical behavior of n-type layers. However, the presence of hydrogen very effectively passivates acceptor species of nitrogen to prohibit p-type conductivity. Conventional and rapid thermal annealing have been investigated to modify the degree of hydrogen passivation.

Citation Download Citation

Easen Ho, P. A. Fisher, J. L. House, Gale S. Petrich, and Leslie A. Kolodziejski "Doping of ZnSe using gas source molecular beam epitaxy", Proc. SPIE 2346, II-VI Blue/Green Laser Diodes, (21 December 1994); https://doi.org/10.1117/12.197266

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