21 December 1994 Gas source molecular beam epitaxy (MBE) of ZnMgSSe layers
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Proceedings Volume 2346, II-VI Blue/Green Laser Diodes; (1994) https://doi.org/10.1117/12.197261
Event: Photonics for Industrial Applications, 1994, Boston, MA, United States
Abstract
Gas-source molecular beam epitaxy (GSMBE) was applied for the growth of ZnMgSSe layers and quantum well (QW) structures. The source materials were elemental Zn and Se, as well as gas sources of bis- methylcyclopentadienyl-magnesium ((MeCp)2Mg) and H2S. Mg and S compositions were well controlled by the flow rate of (MeCp)2Mg and H2S, respectively. ZnSe/ZnMgSSe QWs with abrupt heterointerface have successfully been grown on [100]-oriented GaAs substrates under in-situ monitoring of specular beam intensity oscillation in reflection high energy electron diffraction (RHEED). Photoluminescence (PL) at 4.2 K revealed sharp and intense emission from single QWs, which is attributed to n equals 1 heavy-hole free exciton. The photopumped lasing of a double heterostructure was achieved at room temperature with low threshold excitation intensity (110 kW/cm2), suggesting formation of well-defined heterostructures and promising potential of GSMBE for device applications.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shizuo Fujita, Shizuo Fujita, Jun Suda, Jun Suda, Yoichi Kawakami, Yoichi Kawakami, Shigeo Fujita, Shigeo Fujita, } "Gas source molecular beam epitaxy (MBE) of ZnMgSSe layers", Proc. SPIE 2346, II-VI Blue/Green Laser Diodes, (21 December 1994); doi: 10.1117/12.197261; https://doi.org/10.1117/12.197261
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