21 December 1994 Initial stages of ZnSe growth on the GaAs(001) surface studied by scanning tunneling microscopy
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Proceedings Volume 2346, II-VI Blue/Green Laser Diodes; (1994) https://doi.org/10.1117/12.197254
Event: Photonics for Industrial Applications, 1994, Boston, MA, United States
Abstract
In this paper we describe Scanning Tunnelling Microscopy (STM) studies of the initial stages of the growth of ZnSe on GasAs(001). The starting GaAs(001)-(2 X 4) surface on GaAs epilayers and on oxide desorbed surfaces has been imaged. The GaAs epilayer surface is found to be much smoother than the GaAs oxide desorbed surface. ZnSe growth on a Se- terminated GaAs-(2 X 1) surface has been found to result in 3D nucleation and island growth and results in a high density of stacking faults in the ZnSe film. ZnSe growth started directly on the GaAs-(2 X 4) surface is more 2D, although rather disordered, and results in a lower stacking fault density in the ZnSe film.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael D. Pashley, Du Li, "Initial stages of ZnSe growth on the GaAs(001) surface studied by scanning tunneling microscopy", Proc. SPIE 2346, II-VI Blue/Green Laser Diodes, (21 December 1994); doi: 10.1117/12.197254; https://doi.org/10.1117/12.197254
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