21 December 1994 Microstructure study of failure mechanism of II-VI blue-green laser diodes
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Proceedings Volume 2346, II-VI Blue/Green Laser Diodes; (1994) https://doi.org/10.1117/12.197263
Event: Photonics for Industrial Applications, 1994, Boston, MA, United States
Abstract
The rapid degradation mechanism of current II-VI blue-green laser diodes based on the pseudomorphic ZnCdSe/ZnSSe/ZnMgSSe separate confinement heterostructures (SCHs) grown by MBE has been studied by using electroluminescence (EL) and transmission electron microscopy (TEM). Nonluminescent dark defects observed in the laser diodes have been identified to be dislocation networks consisting of branches of dislocation dipoles developed at the quantum well region. Stacking fault-dislocation complexes introduced into the laser structure during the MBE growth have been found to be the origin for the nucleation of the dislocation networks. The experimental results indicate that the point defect density at the quantum well region can be reduced by optimizing the growth conditions of the region.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guo-Chun Hua, Donald C. Grillo, Jung Han, Mike D. Ringle, Yongping Fan, Robert L. Gunshor, Minna Hovinen, Arto V. Nurmikko, Nobuo Otsuka, "Microstructure study of failure mechanism of II-VI blue-green laser diodes", Proc. SPIE 2346, II-VI Blue/Green Laser Diodes, (21 December 1994); doi: 10.1117/12.197263; https://doi.org/10.1117/12.197263
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