21 December 1994 Optical degradation of II-VI devices and heterostructures
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Proceedings Volume 2346, II-VI Blue/Green Laser Diodes; (1994) https://doi.org/10.1117/12.197262
Event: Photonics for Industrial Applications, 1994, Boston, MA, United States
Abstract
We report the use of photoluminescence imaging as a quick and effective method for determining defect densities and giving insight into degradation mechanisms in II-VI CdxZn1-xSe quantum well devices and heterostructures grown on GaAs. From our use of photoluminescence imaging we have observed that the device lifetimes are dependent on the stacking fault density. The stacking faults serve as nonradiative recombination centers that generate the dark line defects. In our studies, degradation rates were found to be independent of chlorine doping, barrier material, and the removal of the GaAs substrate.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Greg Meis Haugen, Greg Meis Haugen, Supratik Guha, Supratik Guha, Jim M. DePuydt, Jim M. DePuydt, Michael A. Haase, Michael A. Haase, Kwok Keung Law, Kwok Keung Law, Thomas J. Miller, Thomas J. Miller, Bor-Jen Wu, Bor-Jen Wu, } "Optical degradation of II-VI devices and heterostructures", Proc. SPIE 2346, II-VI Blue/Green Laser Diodes, (21 December 1994); doi: 10.1117/12.197262; https://doi.org/10.1117/12.197262
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