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9 February 1995 Exciton luminescence in beta-ZnP2: 2s and 3s
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Proceedings Volume 2362, International Conference on Excitonic Processes in Condensed Matter; (1995)
Event: Excitonic Processes in Condensed Matter: International Conference, 1994, Darwin, Australia
Secondary emission spectra in the higher region of exciton band of ZnP2 single crystal are measured at 6 K with a tunable Ti:sapphire laser as an exciting light source. The luminescence bands due to the radiative recombination of the 2s, 3s and 4s excitons are clearly observed separately. It is also found that the 1LO Raman line with energy of 32.2 meV shows resonance enhancement near the 2s exciton band. On the contrary, the intensity of the 1LO Raman line becomes anomalously weak when it is just superimposed on the 3s luminescence peak. The shapes of these luminescence bands change considerably when the 1LO Raman line approaches them. The changes in intensity of the 2s and 3s exciton bands with the excitation energy are briefly discussed in regard to the relaxation processes of polariton.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mitsuru Sugisaki, Osamu Arimoto, Kaizo Nakamura, Koichiro Tanaka, and Tohru Suemoto "Exciton luminescence in beta-ZnP2: 2s and 3s", Proc. SPIE 2362, International Conference on Excitonic Processes in Condensed Matter, (9 February 1995);

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