9 February 1995 Excitonic effects and luminescent properties of narrow-gap Hg1-xCdxTe
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Proceedings Volume 2362, International Conference on Excitonic Processes in Condensed Matter; (1995) https://doi.org/10.1117/12.200956
Event: Excitonic Processes in Condensed Matter: International Conference, 1994, Darwin, Australia
Abstract
We present a study of the excitonic luminescence contribution in Hg1-xCdxTe for a wide CdTe mole fraction range (0.23 < x < 0.97). This mixed crystal semiconductor system is relatively well understood and offers a unique possibility to study the contribution of excitons to the luminescence of a material with a continuously decreasing energy gap. This reexamination is based on a set of uniform (carrier concentration, degree of compensation) samples grown by the traveling heater method. Furthermore the luminescence from Hg0.15Cd0.85Te/Hg0.7Cd0.3Te superlattices is analyzed with respect to the luminescence contributions of confined 2D excitons.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jens Wolfgang Tomm, Klaus H. Herrmann, Christopher J. Summers, and Tuyen K. Tran "Excitonic effects and luminescent properties of narrow-gap Hg1-xCdxTe", Proc. SPIE 2362, International Conference on Excitonic Processes in Condensed Matter, (9 February 1995); doi: 10.1117/12.200956; https://doi.org/10.1117/12.200956
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