The absorption-edge spectra have been studied in the temperature range from 4 to 300 K for single-crystal CdTe, ZnTe, GaAs wafers and GaAs/(Al,Ga)As multiple quantum well (MQW) structures. In all cases the frequency integrated absorption coefficient K is found to increase monotonously with temperature T up to T equals T* and to keep constant above T*. The temperatures T*, depending on semiconducting materials, might be considered as critical ones corresponding to a change in polaritonic energy transport mechanism due to the lack of spatial dispersion at T > T*. It was shown, that though the measured temperature T* approximately 102 K correspond to much larger linewidths than could be explained by using the theoretical value of the exciton damping parameter, this discrepancy can be overcome if a temperature-dependent inhomogeneous broadening is taken into account consistently. A similar temperature dependence of K with T* approximately equals 20 K has been observed for the first time in GaAs/(Al,Ga)As MQW-structures.
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